Near-infrared femtosecond laser crystallized poly-Si thin film transistors

Near-infrared femtosecond laser crystallized poly-Si thin film transistors.

Polycrystalline silicon (poly-Si) thin film transistors (TFTs) fabricated by near-infrared femtosecond laser annealing (FLA) are demonstrated. The FLA-annealed poly-Si channels exhibit low tail-state, deep-state, and midgap-state densities of grain traps. Characteristics such as field-effect mobility, threshold voltage, and subthreshold slope for FLA-annealed poly-TFTs are comparable to those o...

Short-Channel Poly-Si Thin-Film Transistors with Ultrathin Channel

Fluorine Ions Implantation Enhanced Performance of Poly-Si Thin Film Transistors Using

The effect of gate overlap lightly doped drains on low temperature poly-Si thin film transistors

0026-2714/$ see front matter 2011 Elsevier Ltd. A doi:10.1016/j.microrel.2011.08.009 ⇑ Corresponding author. Tel.: +82 31 290 7139; fax E-mail address: [email protected] (J. Yi). Low temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) have a high carrier mobility that enables the design of small devices that offer large currents and fast switching speeds. However, the elec...

Novel Processes for Poly-Si Thin-Film Transistors on Plastic Substrates

Novel Processes for Poly-Si Thin-Film Transistors on Plastic Substrates